Investigation of Hot Electrons and Hot Phonons Generated within an AlN/GaN High Electron Mobility Transistor

Hot-Phonon Effect on the Reliability of GaN-Based Heterostructure Field-Effect Transistors

GaN-based high electron mobility transistors (HEMTs) are among the most promising devices for high power radio frequency (RF)/microwave (MW) and switching applications owing to their high breakdown voltage, high electron density, and high electron saturation velocity.[1,2] In fact, GaN HEMTs are currently employed in RF/MW high power amplifiers, low-noise amplifiers (LNA), and RF switching modu...

2-d Simulation of Hot Electron-phonon Interactions in a Submicron Gallium Nitride Device Using Hydrodynamic Transport Approach

In this study, a thermal and electrical coupled device solver is developed to simulate the energy transfer mechanism within a GaN FET with a gate length of 0.2 mm. The simulation simultaneously solves a set of hydrodynamic equations (derived from the Boltzmann Transport Equation) and the Poisson equation for electron, optical phonon and acoustic phonon energies, electron number density, electri...

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors

The intrinsic mechanisms of drain lag and current collapse in GaN-based high-electron-mobility transistors are studied by using two-dimensional numerical simulations. Simulated drain lag characteristics are in good agreement with reported experimental data. The dynamic pictures of trapping of hot electrons under drain-pulse voltages are discussed in detail. Hot-electron buffer-trapping effect p...

Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation

We study the concept of double-heterostructure quantum well (DHQW) InAlN/GaN/AlGaN high electron mobility transistor (HEMT) for higher device robustness and less degradation. Physics-based device simulation proves that the back barrier blocks the carrier injection into the device buffer. However, the energy of the injected electrons in the buffer is higher for any quantum well design in InAlN/G...